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Advantages
Capabilities
Company
How to Start
About MEMS
Clean: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Clean
Process characteristics:
Etchant
Specify preferred cleaning agent/etchant (if known).
Etchant
1165 PR remover
acetic acid
acetic acid/phosphoric acid/water [1:1:30]
Ashland's 16:1:1:2 Aluminum Etch
Cyantek CR-14 (acetic acid/ceric ammonium nitrate [8%:22%])
Dynasol 165
ethylenediamene pyrocatecol
HCl [2.2%]
HCl [4%]
HCl/hydrogen peroxide/water [1:1:5]
HF
HF (buffered)
HF [49%]
HF/nitric acid
HF/water [1:10]
HF/water [1:1]
HF/water [1:50]
J.T. Baker 80-15-3-2 (CMOS Grade)
J.T. Baker Buffered Oxide Etchant 5419-03 VLSI Grade
KOH
Microchrome Tech - CEP200
NaOH/hydrogen peroxide
nitric acid/HF/water [1:2:1]
other
phosphoric acid
phosphoric acid [85%]
phosphoric acid/nitric acid/acetic acid
potasium iodide/ iodine
PRS 2000
PRS 3000
sulfuric acid/hydrogen peroxide
sulfuric acid/hydrogen peroxide [4:1]
sulfuric acid/hydrogen peroxide [98:2]
sulfuric acid/hydrogen peroxide [9:1]
Transene Aluminum Etchant -Type D
Transene Aluminum Etchant Type A (phosphoric acid/nitric acid/acetic acid)
Transene Gold TFA
Transene Nichrome TFN
Transene Nickel TFB
Specify preferred cleaning agent/etchant (if known).
Process duration
Specify preferred cleaning time (if known).
Process duration
min
s
Specify preferred cleaning time (if known).
unconstrained
Sides processed
Specify whether cleaning is to occur on a single or both sides of substrate.
Sides processed
both
either
Specify whether cleaning is to occur on a single or both sides of substrate.
Temperature
Preferred cleaning temperature (if known).
Temperature
°C
Preferred cleaning temperature (if known).
unconstrained
Equipment