Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  APCVD
Process characteristics:
Material
Material to be deposited.
Material
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Sides processed
Specify whether deposition is to occur on a single or both sides of substrate.
Sides processed
Specify whether deposition is to occur on a single or both sides of substrate.
Thickness
Thickness of film to be deposited.
Thickness
Thickness of film to be deposited.
unconstrained
Equipment
Comments:
  • Atmospheric pressure chemical vapor deposition (APCVD) is performed in a reactor at temperatures up to ~400 degC. The deposited film is a product of a chemical reaction between the source gases supplied to the reactor. The process is typically performed on one side of the substrate at a time.