Photoresist strip (non-metal) |
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| Batch size |
25 |
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| Etchant Solutions and their concentrations. |
sulfuric acid/hydrogen peroxide |
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| Material |
photoresist (category) |
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| Process duration |
40 min |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1 |
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| Sides processed |
both |
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| Temperature |
120 °C |
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| Wafer size |
|
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| Equipment |
Nonmetal wet bench |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
teflon chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 550 µm |
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| Comments: |
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