|
| Batch size |
1 |
|---|
| Material |
SU-8 |
|---|
| Sides processed |
both |
|---|
| Temperature |
90 °C |
|---|
| Thermal duration |
40 min |
|---|
| Wafer size |
|
|---|
| Equipment |
Hotplate |
| Equipment characteristics: |
| Die area Die area the equipment can accept |
0.1 .. 100 cm2 |
|---|
| Die dimension Characteristic dimension of dies (e.g., side length of square) the equipment can accept |
10 .. 100 mm |
|---|
| Die holder Device that holds the die(s) during processing |
metal chuck |
|---|
| Die materials List of allowed materials for dies accepted by this equipment |
alumina, gallium arsenide, glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon, Borofloat (Schott), silicon dioxide, silicon germanium, silicon on insulator |
|---|
| Die thickness List or range of die thicknesses the tool can accept |
100 .. 10000 µm |
|---|
| Piece dimension Range of wafer piece dimensions the equipment can accept |
10 .. 100 mm |
|---|
| Piece geometry Geometry of wafer pieces the equipment can accept |
rectangular, circular, triangular shard, irregular, other |
|---|
| Piece thickness Range of wafer piece thickness the equipment can accept |
100 .. 10000 µm |
|---|
| Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
|---|
| Wafer holder Device that holds the wafers during processing. |
metal chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, gallium arsenide, glass (category), quartz (single crystal), silicon, silicon germanium, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 10000 µm |
|---|
