Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Anodic bonding (with alignment)
Process characteristics:
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Contact force
Specify contact force applied to substrates during bonding.
Contact force*
Specify contact force applied to substrates during bonding., must be 0 .. 5000 mN
0 .. 5000 mN
Temperature
Temperature of the substrates during bonding.
Temperature*
Temperature of the substrates during bonding., must be 25 .. 450 °C
25 .. 450 °C
Voltage
Voltage applied across wafers during bonding.
Voltage*
Voltage applied across wafers during bonding., must be 0 .. 1200 V
0 .. 1200 V
Alignment tolerance
Registration of CAD data to features on wafer
 1 µm
Batch size 2
Bonded materials
Pair of materials bonded by this process
 Pyrex (Corning 7740), silicon
Pressure
Pressure of process chamber during processing
 100 mTorr
Wafer size
Wafer size
Equipment EVG 501
  • The combined stack thickness must be less than 4 mm.
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 metal chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, Pyrex (Corning 7740)
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 1000 µm
Comments:
  • The cost is based on processing time of 190 mins.