on front Plating preparation (descum) |
|
| Ambient Ambient to which substrate is exposed during processing |
oxygen/carbon tetrafluoride |
|---|
| Material |
SU-8 |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
SU-8: 1 |
|---|
| Sides processed |
either |
|---|
| Wafer size |
|
|---|
| Equipment |
Plasma etcher |
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
|---|
| Wafer holder Device that holds the wafers during processing. |
aluminum plate |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1500 µm |
|---|
