Aluminum wet etch (High power deposition) |
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| Process characteristics: |
| Depth Depth of material removed by etch process |
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| Batch size |
3 |
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| Etch rate |
0.0446 µm/min |
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| Etchant Solutions and their concentrations. |
J.T. Baker 80-15-3-2 (CMOS Grade) |
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| Excluded materials |
gold (category), copper |
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| Material |
aluminum |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
aluminum: 1, photoresist (category): 5.28 |
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| Sides processed |
both |
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| Temperature |
25 °C |
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| Wafer size |
|
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| Equipment |
Air Control Microvoid |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
teflon carrier |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon dioxide, Borofloat (Schott), alumina |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
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| Extra terms |
Customer agrees that wafers, masks, and other materials
incorporating any process(es) provided by this fabrication site
are to be used solely for non-commercial research
purposes.
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