|
| Process characteristics: |
| Depth Depth of material removed by etch process |
|
|---|
| Batch size |
1 |
|---|
| Etchant Solutions and their concentrations. |
Cyantek CR-14 (acetic acid/ceric ammonium nitrate [8%:22%]) |
|---|
| Mask materials Materials that can be used to mask etching. |
photoresist (G-line), photoresist (I-line) (category) |
|---|
| Material |
chromium |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
chromium: 1 |
|---|
| Sides processed |
both |
|---|
| Temperature |
25 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Wet etch bench |
| Equipment characteristics: |
| Piece dimension Range of wafer piece dimensions the equipment can accept |
1 .. 150 mm |
|---|
| Piece geometry Geometry of wafer pieces the equipment can accept |
rectangular |
|---|
| Piece thickness Range of wafer piece thickness the equipment can accept |
200 .. 1000 µm |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
teflon boat, teflon carrier |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
