|
| Process characteristics: |
| Depth |
|
|---|
| Etch rate |
2.5 µm/min |
|---|
| Etch type |
wet isotropic |
|---|
| Etchant Solutions and their concentrations. |
sulfuric acid/hydrogen peroxide |
|---|
| Mask materials Materials that can be used to mask etching. |
photoresist (G-line), photoresist (I-line) (category) |
|---|
| Material |
copper |
|---|
| Sides processed |
both |
|---|
| Temperature |
27 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
wet bench I (acid bench) |
| Equipment characteristics: |
| Batch sizes |
100 mm: 12, 125 mm: 12, 150 mm: 12 |
|---|
| MOS clean |
no |
|---|
| Piece dimension Range of wafer piece dimensions the equipment can accept |
2 .. 150 mm |
|---|
| Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, other, rectangular, triangular shard |
|---|
| Piece thickness Range of wafer piece thickness the equipment can accept |
200 .. 1000 µm |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
|---|
| Wafer holder Device that holds the wafers during processing. |
teflon boat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
