|
| Process characteristics: |
| Depth Depth of material removed by etch process |
|
|---|
| Etch rate |
800 Å/min |
|---|
| Etchant Solutions and their concentrations. |
HF (buffered) |
|---|
| Mask materials Materials that can be used to mask etching. |
silicon nitride |
|---|
| Material |
silicon dioxide |
|---|
| Sides processed |
both |
|---|
| Temperature |
25 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Wet bech #1 |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25 |
|---|
| MOS clean |
yes |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
teflon cassette |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), fused silica, silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
| Comments: |
|
| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
