on front Silicon nitride PECVD |
|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
nitrogen, silane, ammonia |
|---|
| Material |
silicon nitride |
|---|
| Microstructure |
amorphous |
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| Sides processed |
either |
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| Uniformity |
-0.03 .. 0.03 |
|---|
| Wafer size |
|
|---|
| Equipment |
Oxford Plasmalab PECVD System |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
