Buffered Oxide Etch (BOE) |
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| Process characteristics: |
| Depth |
|
|---|
| Etch type |
wet isotropic |
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| Etchant Solutions and their concentrations. |
HF (buffered) |
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| Material |
silicon dioxide |
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| Sides processed |
both |
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| Temperature |
30 °C |
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| Wafer size |
|
|---|
| Equipment |
Wet bench #1 |
| Equipment characteristics: |
| Batch sizes |
150 mm: 25 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat |
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| Wafer holder Device that holds the wafers during processing. |
teflon cassette |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, Corning Eagle 2000, silicon, Corning 1737, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
|---|
