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Reactive Evaporation - Optical film coating (Leybold APS 1104): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Reactive Evaporation - Optical film coating (Leybold APS 1104)
Process characteristics:
Material
Material
*
hafnium dioxide
silicon dioxide
Thickness
Thickness
*
Å
must be 900 .. 2400 Å
900 .. 2400 Å
Wafer size
Wafer size
150 mm
Equipment
Leybold APS 1104
Equipment characteristics:
Batch sizes
150 mm: 16
Wafer geometry
Types of wafers this equipment can accept
1-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, fused silica, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 675 µm
Comments:
PIAD : Plasma and Ion Assisted Deposition