Aluminum Nitride (AlN) Sputter Deposition |
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| Process characteristics: |
| Thickness |
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| Material |
aluminum nitride |
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| Temperature |
500 °C |
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| Wafer size |
|
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| Equipment |
Unaxis CLC 200 |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat |
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| Wafer holder Device that holds the wafers during processing. |
aluminum chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
PZT, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 600 µm |
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